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| TS862C12R Major characteristics VRRM VF IO 120 0.88 10 V V A (10A) (120V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 0.9 0.3 10 +0.5 Characteristics TS862C12R Units Condition Tc=25C MAX. 1.2 0.2 5.08 4.5 0.2 1.32 1.5 Max 9.3 0.5 0.8 --0.1 2.7 +0.2 0.4 +0.2 1. Gate 2, 4. Drain 3. Source Features Low VF High Voltage Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : T-pack Epoxy resin UL : V-0 Connection diagram Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C Unless otherwise specified ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Average output current Non-repetitive surge current ** Operating junction temperature Storage temperature Symbol VRSM VRRM Io IFSM Tj Tstg Square wave, duty=1/2 Tc=137C Sine wave 10ms 1shot Conditions tw=500ns, duty=1/40 1 2 3 Rating 120 120 10 * 75 +150 -40 to +150 Unit V V A A C C * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IFM=10A VR=VRRM Junction to case Max. 0.88 150 3.0 Unit V A C/W Mechanical characteristics Approximate mass 2 g 3.0 0.3 (120V / 10A ) Characteristics TS862C12R (10A) Forward Characteristic (typ.) 10 1 Reverse Characteristic (typ.) Tj=150C Tj=125C I F Forward Current (A) I R Reverse Current (mA) 10 10 0 Tj=100C Tj=150C Tj=125C Tj=100C Tj=25C 10 -1 1 10 -2 Tj= 25C 10 -3 0.1 0.0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 V F Forward Voltage (V) V R Reverse Voltage (V) Forward Power Dissipation (max.) 8 Io Reverse Power Dissipation (max.) 4 360 W F Forward Power Dissipation (W) P R Reverse Power Dissipation (W) DC VR 6 360 Square wave =60 Square wave =120 Sine wave =180 4 Square wave =180 DC 2 =180 2 Per 1element 0 0 2 4 6 0 0 20 40 60 80 100 120 140 I o Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) (max.) 160 Junction Capacitance Characteristic (max.) 1000 150 140 DC Sine wave =180 Square wave =180 Square wave =120 Square wave =60 Case Temperature Junction Capacitance (pF) Cj (C) 130 100 120 360 Io VR=60V Tc 110 100 0 5 10 15 10 1 10 100 1000 :Conduction angle of forward current for each rectifier element Io Average Output Current (A) VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (120V / 10A ) Surge Capability (max.) 1000 1000 TS862C12R (10A) Surge Current Ratings (max.) (A) 100 IFSM PeakHAlf-WaveCurrent (A) 1 10 100 Peak Half - Wave Current 100 I FSM 10 10 1 10 100 1000 Number of Cycles at 50Hz tTime (ms) Sinewave Transient Thermal Impedance (max.) 10 2 Transient Thermal Impedance (C/W) 10 1 Rth j-c: 3 C/W 10 0 10 -1 10 -2 10 -1 10 0 10 1 10 2 T Time (s) |
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